The global magneto resistive RAM (MRAM) market reached a value of US$ 275.4 Million in 2021. Looking forward, IMARC Group expects the market to reach a value of US$ 3,436.9 Million by 2027 exhibiting a CAGR of 48.60% during 2022-2027.
Magneto resistive random-access memory (MRAM), or magnetic RAM, refers to a non-volatile memory that utilizes magnetic charges to store information. Some widely available variants include spin-transfer torque and toggle MRAM. They use magnetic tunnel junction (MTJ), which consists of two magnetic layers separated by an insulation or dielectric layer. MRAM is a high-density and cost-effective RAM, and it also comprises of a capacitor and transistor that assist in retaining the information stored in the memory without a power source. Consequently, MRAM is widely used across several sectors, including robotics, automotive, aerospace, etc.
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Global Magneto Resistive RAM (MRAM) Market Trends:
The expanding consumer electronics industry is one of the key factors driving the magneto resistive RAM (MRAM) market. In line with this, the rising utilization of MRAM in numerous electronic gadgets, including workstations, smart wearables, smartphones, digital cameras, etc., is further catalyzing the market growth. Moreover, the escalating demand for magnetic RAM in the aerospace and defense sectors for high-temperature data storage is also augmenting the global market. Besides this, various product innovations, such as the development of low-power MRAM variants for radiation-hardened microchips, are acting as significant growth-inducing factors. Additionally, the increasing utilization of MRAM in miniaturized and customized integrated circuits (ICs) is positively influencing the market growth. Apart from this, the growing adoption of MRAM-embedded medical sensors for non-invasive diagnostic testing of several medical disorders is projected to fuel the magneto resistive RAM (MRAM) market over the forecasted period.
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Global Magneto Resistive RAM (MRAM) Market 2022-2027 Analysis and Segmentation:
The competitive landscape of the market has been studied in the report with the detailed profiles of the key players operating in the market.
Avalanche Technology Inc., Crocus Nano Electronics LLC, Everspin Technologies Inc., Honeywell International Inc., Infineon Technologies AG, Intel Corporation, NVE Corporation, Qualcomm Incorporated, Samsung Electronics Co. Ltd., Spin Memory Inc., Toshiba Corporation and Tower Semiconductor Ltd.
The report has segmented the market on the basis on region, type offering, application.
Breakup by Type:
- Toggle MRAM
- Spin-Transfer Torque MRAM (STT-MRAM)
Breakup by Offering:
Breakup by Application:
- Consumer Electronics
- Enterprise Storage
- Aerospace and Defense
Breakup by Region:
- North America: (United States, Canada)
- Asia Pacific: (China, Japan,India, South Korea, Australia, Indonesia, Others)
- Europe: (Germany, France,United Kingdom, Italy, Spain, Russia, Others)
- Latin America: (Brazil, Mexico, Others)
- Middle East and Africa
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Key highlights of the report:
- Market Performance (2016-2021)
- Market Outlook (2022-2027)
- Porter’s Five Forces Analysis
- Market Drivers and Success Factors
- SWOT Analysis
- Value Chain
- Comprehensive Mapping of the Competitive Landscape
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